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Freescale Semiconductor Technical Data
Document Number: MHW8182CN Rev. 3, 4/2006
CATV Amplifier Module
Features * Specified for 77 - , 110 - and 128 - Channel Loading * Excellent Distortion Performance * Superior Gain, Return Loss and DC Current Stability over Temperature * Silicon Bipolar Transistor Technology * Unconditionally Stable Under All Load Conditions Applications * CATV Systems Operating in the 40 to 860 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Driver Amplifier in Linear General Purpose Applications * Output Stage Amplifier on Applications Requiring Low Power Dissipation Description * 24 Vdc Supply, 40 to 860 MHz, CATV Forward Amplifier Module * Replaced MHW8182C. There are no form, fit or function changes with this part replacement. * RoHS Compliant
MHW8182CN
860 MHz 19.1 dB GAIN 128 - CHANNEL CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value +70 +28 - 20 to +100 - 40 to +100 Unit dBmV Vdc C C
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted)
Characteristic Frequency Range Power Gain Slope 50 MHz 860 MHz 40 - 860 MHz Symbol BW Gp S GF IRL/ORL 20 -- CSO128 CSO110 CSO77 -- -- -- -- -- - 71 - 70 - 70 -- 0.005 - 64 - 63 - 64 dB dB/MHz dBc 128- Channel FLAT 110- Channel FLAT 77- Channel FLAT Min 40 18 18.2 0 -- Typ -- 18.5 19.1 0.7 0.3 Max 860 19 20.5 2.5 0.6 Unit MHz dB dB dB
Gain Flatness (40 - 860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case)
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHW8182CN 1
RF Device Data Freescale Semiconductor
Table 2. Electrical Characteristics (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) (continued)
Characteristic Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM = 55 MHz) (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Noise Figure 128- Channel FLAT 110- Channel FLAT 77- Channel FLAT 128- Channel FLAT 110- Channel FLAT 77- Channel FLAT 50 MHz 550 MHz 750 MHz 860 MHz Symbol XMD128 XMD110 XMD77 CTB128 CTB110 CTB77 NF Min -- -- -- -- -- -- -- -- -- -- 180 Typ - 68 - 66 - 61 - 69 - 68 - 66 4.0 4.5 5.0 5.5 220 Max - 65 - 64 - 59 dBc - 66 - 66 - 64 5.0 -- 6.5 7.5 240 dB Unit dBc
DC Current (VDC = 24 V, TC = 30C)
IDC
mA
MHW8182CN 2 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A Z J A S B V R
DIM A B C D E F G J K L N P Q R S U V W X Y Z
2X
Q 0.010
M
TF
M
A
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. INCHES MIN MAX ---- 1.775 ---- 1.085 ---- 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 ---- 0.600 1.500 BSC 0.200 BSC --- 0.250 ---- 0.435 0.400 BSC 0.163 0.152 0.009 0.011 MILLIMETERS MIN MAX ---- 45.085 ---- 27.559 ---- 21.336 0.381 0.533 11.811 12.954 7.620 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 ---- 15.240 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3.861 4.140 0.229 0.279
F
F
L
2X
2X 6-32UNC-2B
U
0.010 E
M
ZTA
M
12
3
5
789
N
C E K Z
7X
W
T
4X
G
2X
X
D
M
P X T A
M
Y
M
0.02
X
0.010
M
Z
TA
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9.
RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT
CASE 1302 - 01 ISSUE E
MHW8182CN RF Device Data Freescale Semiconductor 3
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MHW8182CN 4Rev. 3, 4/2006
Document Number: MHW8182CN
RF Device Data Freescale Semiconductor

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